elektronische bauelemente ssp7200n 3 a, 200 v, r ds(on) 400 m ? n-channel enhancement mosfet 18-sep-2013 rev. c page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe sop-8pp saves board space. ? fast switching speed. ? high performance trench technology. application dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones package information package mpq leader size sop-8pp 3k 13? inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 200 v gate-source voltage v gs 20 v t a =25c 3 continuous drain current 1 t a =70c i d 2.4 a pulsed drain current 2 i dm 50 a continuous source current (diode conduction) 1 i s 2.3 a t a =25c 5.0 power dissipation 1 t a =70c p d 3.2 w operating junction and st orage temperature range t j , t stg -55 ~ 150 c thermal resistance rating t Q 10 sec 25 maximum junction to ambient 1 steady state r ja 65 c / w notes 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. millimete r millimete r ref. min. max. ref. min. max. a 0.85 1.00 0 10 b 5.3 bsc. b 5.2 bcs c 0.15 0.25 c 0.30 0.50 d 3.8 bcs. d 1.27bsc e 6.05 bcs. e 5.55 bcs. f 0.03 0.30 f 0.10 0.40 g 4.35 bcs. g 1.2 bcs. l 0.40 0.70 sop-8pp
elektronische bauelemente ssp7200n 3 a, 200 v, r ds(on) 400 m ? n-channel enhancement mosfet 18-sep-2013 rev. c page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate-threshold voltage v gs(th) 1 - - v v ds = v gs , i d = 250 a gate-body leakage i gss - - 100 na v ds = 0v, v gs = 12v - - 1 v ds = 160v, v gs = 0v zero gate voltage drain current i dss - - 5 a v ds = 160v, v gs = 0v,t j =55c on-state drain current 1 i d(on) 40 - - a v ds = 5v, v gs = 10v - - 400 v gs = 10v, i d = 3a drain-source on-resistance 1 r ds(on) - - 450 m ? v gs = 4.5v, i d = 2.8a forward transconductance 1 g fs - 40 - s v ds = 15v, , i d = 3a diode forward voltage v sd - 0.7 - v i s = 2.3a, v gs = 0v dynamic 2 total gate charge q g - 15 - gate-source charge q gs - 3 - gate-drain charge q gd - 5 - nc i d = 6a v ds = 15v v gs = 4.5v turn-on delay time td (on) - 15 - rise time t r - 10 - turn-off delay time td (off) - 54 - fall time t f - 26 - ns i d = 1a, v dd = 15v v gen = 10v r l = 6 ? notes 1. pulse test pw Q 300 us duty cycle Q 2%. 2. guaranteed by design, not s ubject to production testing.
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